philips semiconductors objective specification silicon diffused power transistor BU4522DX general description enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. quick reference data symbol parameter conditions typ. max. unit v cesm collector-emitter voltage peak value v be = 0 v - 1500 v v ceo collector-emitter voltage (open base) - 800 v i c collector current (dc) - 10 a i cm collector current peak value - 25 a p tot total power dissipation t hs 25 ?c - 45 w v cesat collector-emitter saturation voltage i c = 7 a; i b = 1.75 a - 3.0 v i csat collector saturation current (fig 17) f = 16 khz 7 - a f = 64 khz 6 - a v f diode forward voltage i f = 7.0 a - 2.2 v t f fall time i csat = 7 a; f = 16 khz 285 400 ns f = 64 khz t.b.f t.b.f ns pinning - sot399 pin configuration symbol pin description 1 base 2 collector 3 emitter case isolated limiting values limiting values in accordance with the absolute maximum rating system (iec 134) symbol parameter conditions min. max. unit v cesm collector-emitter voltage peak value v be = 0 v - 1500 v v ceo collector-emitter voltage (open base) - 800 v i c collector current (dc) - 10 a i cm collector current peak value - 25 a i b base current (dc) - 6 a i bm base current peak value - 9 a -i bm reverse base current peak value 1 -6a p tot total power dissipation t hs 25 ?c - 45 w t stg storage temperature -55 150 ?c t j junction temperature - 150 ?c case 123 b c e rbe 1 turn-off current. july 1998 1 rev 1.000
philips semiconductors objective specification silicon diffused power transistor BU4522DX thermal resistances symbol parameter conditions typ. max. unit r th j-hs junction to heatsink with heatsink compound - 2.8 k/w r th j-a junction to ambient in free air 35 - k/w isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol repetitive peak voltage from all r.h. 65 % ; clean and dustfree - - 2500 v three terminals to external heatsink c isol capacitance from t2 to external f = 1 mhz - 22 - pf heatsink static characteristics t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit i ces collector cut-off current 2 v be = 0 v; v ce = v cesmmax - - 1.0 ma i ces v be = 0 v; v ce = v cesmmax ; - - 2.0 ma t j = 125 ?c bv ebo emitter-base breakdown voltage i b = 600 ma 7.5 13.5 - v r be base-emitter resistance v eb = 7.5 v - 50 - w v ceosust collector-emitter sustaining voltage i b = 0 a; i c = 100 ma; 800 - - v l = 25 mh v cesat collector-emitter saturation voltage i c = 7 a; i b = 1.75 a - - 3.0 v v besat base-emitter saturation voltage i c = 7 a; i b = 1.75 a 0.85 0.94 1.03 v h fe dc current gain i c = 1 a; v ce = 5 v - 10 - h fe i c = 7 a; v ce = 5 v 4.2 5.8 7.3 v f diode forward voltage i f = 7 a - - 2.2 v dynamic characteristics t hs = 25 ?c unless otherwise specified symbol parameter conditions typ. max. unit switching times (16 khz line f = 16 khz; i csat = 7 a; i b1 = 1.4 a; deflection circuit) (i b2 = -3.5 a) t s turn-off storage time 3.5 4.3 m s t f turn-off fall time 285 400 ns switching times (64 khz line i csat = t.b.f deflection circuit) t s turn-off storage time t.b.f t.b.f m s t f turn-off fall time t.b.f t.b.f ns 2 measured with half sine-wave voltage (curve tracer). july 1998 2 rev 1.000
philips semiconductors objective specification silicon diffused power transistor BU4522DX mechanical data dimensions in mm net mass: 5.88 g fig.1. sot399; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 4.5 16.0 max 0.7 10.0 5.1 27 max 18.1 min 4.5 2.2 max 1.1 0.4 m 5.45 5.45 25 25.1 3.0 25.7 5.8 max 3.3 0.95 max 2 3.3 22.5 max july 1998 3 rev 1.000
philips semiconductors objective specification silicon diffused power transistor BU4522DX definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1998 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. july 1998 4 rev 1.000
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